Quantitative Analysis of Compound Semiconductors with an Ion Microanalyzer

Amorphization of elemental and compound semiconductors upon ion implantation

Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si at doses between 1 x 10/cm and 1 x 10/cm. A dose of 1 x 10/cm minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the...

Compound Semiconductors

an infinite planar array of rectangular microstrip patch antenna analysis

the methods which are used to analyze microstrip antennas, are divited into three categories: empirical methods, semi-empirical methods and full-wave analysis. empirical and semi-empirical methods are generally based on some fundamental simplifying assumptions about quality of surface current distribution and substrate thickness. thses simplificatioms cause low accuracy in field evaluation. ful...

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...

Technology Roadmaps for Compound Semiconductors

The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within t...